202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

K.A. Fedorova; M.A. Cataluna; I. Krestnikov; D. Livshits; E.U. Rafailov

doi:10.1109/ISLC.2010.5642655

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

K.A. Fedorova, M.A. Cataluna, I. Krestnikov, D. Livshits, E.U. Rafailov

Aston Institute of Photonic Technologies (AiPT)

Research output: Chapter in Book/Published conference output › Conference publication

Abstract

Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Place of Publication	New York (US)
Publisher	IEEE
Pages	172-173
Number of pages	2
ISBN (Print)	978-1-4244-5683-3
DOIs	https://doi.org/10.1109/ISLC.2010.5642655
Publication status	Published - 2010
Event	22nd IEEE International Semiconductor Laser Conference (ISLC) - Kyoto , Japan Duration: 26 Sept 2010 → 30 Sept 2010

Conference

Conference	22nd IEEE International Semiconductor Laser Conference (ISLC)
Country/Territory	Japan
City	Kyoto
Period	26/09/10 → 30/09/10

Keywords

range

Access to Document

10.1109/ISLC.2010.5642655

Cite this

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title = "202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser",

abstract = "Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.",

keywords = "range",

author = "K.A. Fedorova and M.A. Cataluna and I. Krestnikov and D. Livshits and E.U. Rafailov",

year = "2010",

doi = "10.1109/ISLC.2010.5642655",

language = "English",

isbn = "978-1-4244-5683-3",

pages = "172--173",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "IEEE",

address = "United States",

note = "22nd IEEE International Semiconductor Laser Conference (ISLC) ; Conference date: 26-09-2010 Through 30-09-2010",

}

Fedorova, KA, Cataluna, MA, Krestnikov, I, Livshits, D & Rafailov, EU 2010, 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser. in Conference Digest - IEEE International Semiconductor Laser Conference., WD3, IEEE, New York (US), pp. 172-173, 22nd IEEE International Semiconductor Laser Conference (ISLC), Kyoto , Japan, 26/09/10. https://doi.org/10.1109/ISLC.2010.5642655

TY - GEN

T1 - 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

AU - Fedorova, K.A.

AU - Cataluna, M.A.

AU - Krestnikov, I.

AU - Livshits, D.

AU - Rafailov, E.U.

PY - 2010

Y1 - 2010

N2 - Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

AB - Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved.

KW - range

UR - http://www.scopus.com/inward/record.url?scp=78651062896&partnerID=8YFLogxK

UR - http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5642655

U2 - 10.1109/ISLC.2010.5642655

DO - 10.1109/ISLC.2010.5642655

M3 - Conference publication

AN - SCOPUS:78651062896

SN - 978-1-4244-5683-3

SP - 172

EP - 173

BT - Conference Digest - IEEE International Semiconductor Laser Conference

PB - IEEE

CY - New York (US)

T2 - 22nd IEEE International Semiconductor Laser Conference (ISLC)

Y2 - 26 September 2010 through 30 September 2010

ER -

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

Abstract

Conference

Keywords

Access to Document

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