Carrier lifetime and exciton saturation in a strain-balanced InGaAs/InAsP multiple-quantum-well

R. Mottahedeh*, D. Prescott, S.K. Haywood, David A. Pattison, P.N. Kean, Ian Bennion, M. Hopkinson, M. Pate, L. Hart

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    The bleaching of the n = 1 heavy-hole and light-hole exciton absorption has been studied at room temperature and zero bias in a strain-balanced InGaAs/InAsP multiple quantum well. Pump-probe spectroscopy was used to measure the decay of the light-hole absorption saturation, giving a hole lifetime of only 280 ps. As only 16 meV separates the light- and heavy-hole bands, the short escape time can be explained by thermalization between these bands followed by thermionic emission over the heavy-hole barrier. The saturation density was estimated to be 1 × 1016 cm-3; this is much lower than expected for tensile-strained wells where both heavy and light holes have large in-plane masses. © 1998 American Institute of Physics.

    Original languageEnglish
    Pages (from-to)306-309
    Number of pages4
    JournalJournal of Applied Physics
    Issue number1
    Publication statusPublished - Jan 1998


    • indium compounds
    • gallium arsenide
    • III-V semiconductors
    • carrier lifetime
    • excitons
    • optical saturable absorption
    • semiconductor quantum wells
    • time resolved spectra
    • thermionic emission


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