Characterisation of InAs:GaAs quantum dot-based photoconductive THz antennas

Keyphrases

• Active Materials 100%
• THz Photoconductive Antenna 100%
• GaAs Quantum Dot 100%
• Gallium Arsenide 66%
• Quantum Dots 66%
• THz Signal 66%
• Electric Field (E-field) 33%
• Analytical Tools 33%
• Semiconductors 33%
• Output Signal 33%
• Band Gap 33%
• Ultrashort Pulses 33%
• Ultrashort 33%
• Sapphire Laser 33%
• Ultrafast 33%
• Defect Sites 33%
• Optically Pumped 33%
• Photoconductive 33%
• Semiconductor Structures 33%
• Carrier Mobility 33%
• THz Optoelectronics 33%
• Trap Site 33%
• Photocarriers 33%
• Photoconductive Gain 33%
• InAs Quantum Dots 33%
• Efficient Generation 33%
• Electrodes Pair 33%
• Ultrafast Switching 33%
• Low-temperature-grown GaAs 33%
• Defective Material 33%
• Photonic Energy 33%
• Switching Process 33%
• Integrated Antenna 33%

Engineering

• Gallium Arsenide 100%
• Antenna 100%
• Quantum Dot 100%
• Active Material 75%
• Output Signal 25%
• Sapphire Laser 25%
• Low-Temperature 25%
• Optoelectronics 25%
• Semiconductor Structure 25%
• Photonic Energy 25%
• Band Gap 25%
• Carrier Mobility 25%

Material Science

• Gallium Arsenide 100%
• Quantum Dot 100%
• Ultrashort Pulse 25%
• Sapphire 25%
• Carrier Mobility 25%
• Lattice Material 25%
• Semiconductor Structure 25%