Characterising the surface roughness of AFM grown SiO2 on Si

D. Hill; X. Blasco; M. Porti; M. Nafrı́a; X. Aymerich

doi:10.1016/S0026-2714(01)00078-6

Characterising the surface roughness of AFM grown SiO₂ on Si

D. Hill, X. Blasco, M. Porti, M. Nafrı́a, X. Aymerich

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

Abstract

The reliability of AFM grown SiO₂ as a gate oxide needs to be examined if nanodevices fabricated from the oxide are to be integrated into standard microelectronic technology. In this article we present our preliminary results on AFM fabrication and topographical characterisation of large area oxide, electrical characterisation is to follow. Roughness is the central issue of this work due to its importance in relation to the quality of ultra thin dielectrics.

Original language	English
Pages (from-to)	1077-1079
Number of pages	3
Journal	Microelectronics Reliability
Volume	41
Issue number	7
DOIs	https://doi.org/10.1016/S0026-2714(01)00078-6
Publication status	Published - 1 Jan 2001

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abstract = "The reliability of AFM grown SiO2 as a gate oxide needs to be examined if nanodevices fabricated from the oxide are to be integrated into standard microelectronic technology. In this article we present our preliminary results on AFM fabrication and topographical characterisation of large area oxide, electrical characterisation is to follow. Roughness is the central issue of this work due to its importance in relation to the quality of ultra thin dielectrics.",

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AU - Porti, M.

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AU - Aymerich, X.

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AB - The reliability of AFM grown SiO2 as a gate oxide needs to be examined if nanodevices fabricated from the oxide are to be integrated into standard microelectronic technology. In this article we present our preliminary results on AFM fabrication and topographical characterisation of large area oxide, electrical characterisation is to follow. Roughness is the central issue of this work due to its importance in relation to the quality of ultra thin dielectrics.

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Characterising the surface roughness of AFM grown SiO₂ on Si

Abstract

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