COMPACT 40 GBIT/S OPTICAL DEMULTIPLEXER USING A GAINASP OPTICAL AMPLIFIER

A. D. Ellis; D. M. Spirit

doi:10.1049/el:19931414

COMPACT 40 GBIT/S OPTICAL DEMULTIPLEXER USING A GAINASP OPTICAL AMPLIFIER

A. D. Ellis, D. M. Spirit

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

Abstract

A polarisation insensitive GaInAsP near travelling wave semiconductor laser amplifier is used as the nonlinear element in a nonlinear optical loop mirror. With this compact configuration, the authors demonstrate a continuously tunable switching window, and report, for the first time using semiconductor materials, error ratio measurements for a demultiplexing operation from 40 to 10 Gbit/s, with a receiver sensitivity of -23 dBm.

Original language	English
Pages (from-to)	2115-2116
Number of pages	2
Journal	Electronics letters
Volume	29
Issue number	24
DOIs	https://doi.org/10.1049/el:19931414
Publication status	Published - 25 Nov 1993

Keywords

III-V semiconductors
demultiplexing equipment
gallium arsenide
indium compounds
mirrors
nonlinear optics
optical communication equipmentment
optical switches
semiconductor lasers

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10.1049/el:19931414

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abstract = "A polarisation insensitive GaInAsP near travelling wave semiconductor laser amplifier is used as the nonlinear element in a nonlinear optical loop mirror. With this compact configuration, the authors demonstrate a continuously tunable switching window, and report, for the first time using semiconductor materials, error ratio measurements for a demultiplexing operation from 40 to 10 Gbit/s, with a receiver sensitivity of -23 dBm.",

keywords = "III-V semiconductors , demultiplexing equipment , gallium arsenide , indium compounds , mirrors, nonlinear optics, optical communication equipmentment, optical switches, semiconductor lasers",

author = "Ellis, {A. D.} and Spirit, {D. M.}",

year = "1993",

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N2 - A polarisation insensitive GaInAsP near travelling wave semiconductor laser amplifier is used as the nonlinear element in a nonlinear optical loop mirror. With this compact configuration, the authors demonstrate a continuously tunable switching window, and report, for the first time using semiconductor materials, error ratio measurements for a demultiplexing operation from 40 to 10 Gbit/s, with a receiver sensitivity of -23 dBm.

AB - A polarisation insensitive GaInAsP near travelling wave semiconductor laser amplifier is used as the nonlinear element in a nonlinear optical loop mirror. With this compact configuration, the authors demonstrate a continuously tunable switching window, and report, for the first time using semiconductor materials, error ratio measurements for a demultiplexing operation from 40 to 10 Gbit/s, with a receiver sensitivity of -23 dBm.

KW - III-V semiconductors

KW - demultiplexing equipment

KW - gallium arsenide

KW - indium compounds

KW - mirrors

KW - nonlinear optics

KW - optical communication equipmentment

KW - optical switches

KW - semiconductor lasers

UR - https://digital-library.theiet.org/content/journals/10.1049/el_19931414

U2 - 10.1049/el:19931414

DO - 10.1049/el:19931414

M3 - Article

SN - 1350-911X

VL - 29

SP - 2115

EP - 2116

JO - Electronics letters

JF - Electronics letters

IS - 24

ER -

COMPACT 40 GBIT/S OPTICAL DEMULTIPLEXER USING A GAINASP OPTICAL AMPLIFIER

Abstract

Keywords

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