Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek; R. Leyman; D. Carnegie; N. Bazieva; G. Erbert; S. Schulz; C. Reardon; S. Reynolds; E. Rafailov

doi:10.1063/1.4747724

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

T. Kruczek, R. Leyman, D. Carnegie, N. Bazieva, G. Erbert, S. Schulz, C. Reardon, S. Reynolds, E. Rafailov

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

Abstract

Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals? difference frequency ~1 THz.(C) 2012 American Institute of Physics.

Original language	English
Article number	081114
Number of pages	4
Journal	Applied Physics Letters
Volume	101
Issue number	8
DOIs	https://doi.org/10.1063/1.4747724
Publication status	Published - 23 Aug 2012

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10.1063/1.4747724

https://strathprints.strath.ac.uk/54166/

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title = "Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device",

abstract = "Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals? difference frequency ~1 THz.(C) 2012 American Institute of Physics.",

author = "T. Kruczek and R. Leyman and D. Carnegie and N. Bazieva and G. Erbert and S. Schulz and C. Reardon and S. Reynolds and E. Rafailov",

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AU - Kruczek, T.

AU - Leyman, R.

AU - Carnegie, D.

AU - Bazieva, N.

AU - Erbert, G.

AU - Schulz, S.

AU - Reardon, C.

AU - Reynolds, S.

AU - Rafailov, E.

PY - 2012/8/23

Y1 - 2012/8/23

N2 - Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals? difference frequency ~1 THz.(C) 2012 American Institute of Physics.

AB - Generation of continuous wave radiation at terahertz (THz) frequencies from a heterodyne source based on quantum-dot (QD) semiconductor materials is reported. The source comprises an active region characterised by multiple alternating photoconductive and QD carrier trapping layers and is pumped by two infrared optical signals with slightly offset wavelengths, allowing photoconductive device switching at the signals? difference frequency ~1 THz.(C) 2012 American Institute of Physics.

UR - http://apl.aip.org/resource/1/applab/v101/i8/p081114_s1

U2 - 10.1063/1.4747724

DO - 10.1063/1.4747724

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device

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