Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon

Wei He; Ammar Zakar; Thomas Roger; Igor V. Yurkevich; Andre Kaplan

doi:10.1364/OL.40.003889

Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon

Wei He, Ammar Zakar, Thomas Roger, Igor V. Yurkevich, Andre Kaplan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5 × 10¹¹ s^-1 and 1.1 × 10^-10 cm³ s^-1 for the impurity-assisted recombination and Auger ionization, respectively.

Original language	English
Pages (from-to)	3889-3892
Number of pages	4
Journal	Optics Letters
Volume	40
Issue number	16
DOIs	https://doi.org/10.1364/OL.40.003889
Publication status	Published - 13 Aug 2015

Bibliographical note

© 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.

Funding: EPSRC (EP/K503873/1)

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10.1364/OL.40.003889

Nanocrystalline silicon embedded in hydrogenated amorphous silicon
© 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
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https://www.osapublishing.org/ol/abstract.cfm?uri=ol-40-16-3889

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title = "Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon",

abstract = "The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5 × 1011 s-1 and 1.1 × 10-10 cm3 s-1 for the impurity-assisted recombination and Auger ionization, respectively.",

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AU - He, Wei

AU - Zakar, Ammar

AU - Roger, Thomas

AU - Yurkevich, Igor V.

AU - Kaplan, Andre

N1 - © 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited. Funding: EPSRC (EP/K503873/1)

PY - 2015/8/13

Y1 - 2015/8/13

N2 - The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5 × 1011 s-1 and 1.1 × 10-10 cm3 s-1 for the impurity-assisted recombination and Auger ionization, respectively.

AB - The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in samples of nanocrystalline silicon embedded in a matrix of hydrogenated amorphous silicon. We found that the dynamics can be described by a rate equation including linear and quadratic terms corresponding to recombination processes associated with impurities and impurity-assisted Auger ionization, respectively. We determined the values of the recombination coefficients using the initial concentrations method. We report the coefficients of 1.5 × 1011 s-1 and 1.1 × 10-10 cm3 s-1 for the impurity-assisted recombination and Auger ionization, respectively.

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Determination of recombination coefficients for nanocrystalline silicon embedded in hydrogenated amorphous silicon

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