Di-chromatic InGaN based color tuneable monolithic LED with high color rendering index

Amit Yadav*, Ilya E. Titkov, Alexei V. Sakharov, Wsevolod V. Lundin, Andrey E. Nikolaev, Grigorii S. Sokolovskii, Andrey F. Tsatsulnikov, Edik U. Rafailov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We demonstrate a phosphor free, dichromatic GaN-based monolithic white LED with vertically stacked green and blue emitting multiple quantum wells. The optimal thickness of GaN barrier layer between green and blue quantum wells used is 8 nm. This device can be tuned over a wide range of correlated color temperature (CCT) to achieve warm white (CCT = 3600 K) to cool white (CCT = 13,000 K) emission by current modulation from 2.3 A/cm2 to 12.9 A/cm2. It is also demonstrated for the first time that a color rendering index (CRI) as high as 67 can be achieved with such a dichromatic source. The observed CCT and CRI tunability is associated with the spectral power evolution due to the pumping-induced carrier redistribution.

Original languageEnglish
Article number1158
JournalApplied Sciences (Switzerland)
Issue number7
Publication statusPublished - 17 Jul 2018

Bibliographical note

©2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access
article distributed under the terms and conditions of the Creative Commons Attribution
(CC BY) license (http://creativecommons.org/licenses/by/4.0/).


  • Color rendering
  • Colorimetry
  • High CRI
  • Light-emitting diodes
  • Monolithic LED


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