Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowires

Keyphrases

• Direct Measurement 100%
• Strain Relaxation 100%
• Core-shell Nanowires 100%
• Heteroepitaxial Structures 100%
• SiGe 66%
• Strain Relief 66%
• Gliding 66%
• Semiconductors 33%
• Biaxial Strain 33%
• Material Properties 33%
• Dislocation 33%
• Nanowires 33%
• Nanowire Heterostructures 33%
• Core-shell 33%
• Shell Thickness 33%
• Relaxation Mechanism 33%
• Device Performance 33%
• Heteroepitaxial Growth 33%
• Shell Growth 33%
• Grain Formation 33%
• Coherent Strain 33%
• Semiconductor Nanowires 33%
• In Situ Transmission Electron Microscope 33%
• Ge Nanowires 33%
• Slip Plane 33%
• Strain Sharing 33%
• Dislocation Segment 33%
• Dislocation Dynamics Simulations 33%
• Tangential Strain 33%
• Microscope Observation 33%

Engineering

• Strain Relaxation 100%
• Shell Nanowires 100%
• Core-Shell 100%
• Coherency 100%
• Nanowires 75%
• Computer Simulation 25%
• Transmissions 25%
• Axial Strain 25%
• Experimental Measurement 25%
• Nanoscale 25%
• Shell Thickness 25%
• Heterojunctions 25%
• Perfect Dislocation 25%
• Device Performance 25%
• Critical Thickness 25%
• Slip Plane 25%
• Tangential Strain 25%
• Dislocation Dynamics 25%

Material Science

• Nanowire 100%
• Heterojunction 16%
• Materials Property 16%
• Nucleation 16%
• Dislocation Dynamics 16%