Abstract
In this paper we propose a novel type of multiple-layer photomixer based on amorphous/nano-crystalline-Si. Such a device implies that it could be possible to enhance the conversion efficiency from optical power to THz emission by increasing the absorption length and by reducing the device overheating through the use of substrates with higher thermal conductivity compared to GaAs. Our calculations show that the output power from a two-layer Si-based photomixer is at least ten times higher than that from conventional LT-GaAs photomixers at 1 THz.
Original language | English |
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Article number | 095025 |
Number of pages | 5 |
Journal | Semiconductor Science and Technology |
Volume | 24 |
Issue number | 9 |
DOIs | |
Publication status | Published - 29 Aug 2009 |
Bibliographical note
M1 - ArticleKeywords
- TEMPERATURE-GROWN GAAS
- GENERATION