Generation of propagation-invariant light beams from semiconductor light sources

G. S. Sokolovskii; V. V. Dudelev; S. N. Losev; S. A. Zolotovskaya; A. G. Deryagin; V. I. Kuchinskii; E. U. Rafailov; W. Sibbett

doi:10.1134/S1063785008120262

Generation of propagation-invariant light beams from semiconductor light sources

G. S. Sokolovskii, V. V. Dudelev, S. N. Losev, S. A. Zolotovskaya, A. G. Deryagin, V. I. Kuchinskii, E. U. Rafailov, W. Sibbett

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

Original language	English
Pages (from-to)	1075–1078
Journal	Technical Physics Letters
Volume	34
DOIs	https://doi.org/10.1134/S1063785008120262
Publication status	Published - 23 Dec 2008

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title = "Generation of propagation-invariant light beams from semiconductor light sources",

abstract = "We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.",

author = "Sokolovskii, {G. S.} and Dudelev, {V. V.} and Losev, {S. N.} and Zolotovskaya, {S. A.} and Deryagin, {A. G.} and Kuchinskii, {V. I.} and Rafailov, {E. U.} and W. Sibbett",

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doi = "10.1134/S1063785008120262",

language = "English",

volume = "34",

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journal = "Technical Physics Letters",

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T1 - Generation of propagation-invariant light beams from semiconductor light sources

AU - Sokolovskii, G. S.

AU - Dudelev, V. V.

AU - Losev, S. N.

AU - Zolotovskaya, S. A.

AU - Deryagin, A. G.

AU - Kuchinskii, V. I.

AU - Rafailov, E. U.

AU - Sibbett, W.

PY - 2008/12/23

Y1 - 2008/12/23

N2 - We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

AB - We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

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DO - 10.1134/S1063785008120262

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SN - 1063-7850

VL - 34

SP - 1075

EP - 1078

JO - Technical Physics Letters

JF - Technical Physics Letters

ER -

Generation of propagation-invariant light beams from semiconductor light sources

Abstract

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