Generation of propagation-invariant light beams from semiconductor light sources

G. S. Sokolovskii, V. V. Dudelev, S. N. Losev, S. A. Zolotovskaya, A. G. Deryagin, V. I. Kuchinskii, E. U. Rafailov, W. Sibbett

Research output: Contribution to journalArticlepeer-review


We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.
Original languageEnglish
Pages (from-to)1075–1078
JournalTechnical Physics Letters
Publication statusPublished - 23 Dec 2008


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