Growth initiation processes for GaAs and AlGaAs in CBE

Daniel Hill

Growth initiation processes for GaAs and AlGaAs in CBE

Research output: Thesis › Doctoral Thesis

Abstract

The investigation of the nature of the transient period found in reflectance and reflectance anisotropy measurements of GaAs and AlGaAs surfaces during growth by chemical beam epitaxy (CBE) at high III:V BEP ratios.

Original language	English
Qualification	Ph.D.
Awarding Institution	University of Liverpool
Publisher	University of Liverpool
Publication status	Published - 2000

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https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.484292

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@phdthesis{410170e521574c54b5d76d061e3a0b15,

title = "Growth initiation processes for GaAs and AlGaAs in CBE",

abstract = "The investigation of the nature of the transient period found in reflectance and reflectance anisotropy measurements of GaAs and AlGaAs surfaces during growth by chemical beam epitaxy (CBE) at high III:V BEP ratios.",

author = "Daniel Hill",

year = "2000",

language = "English",

publisher = "University of Liverpool",

school = "University of Liverpool",

}

TY - BOOK

T1 - Growth initiation processes for GaAs and AlGaAs in CBE

AU - Hill, Daniel

PY - 2000

Y1 - 2000

N2 - The investigation of the nature of the transient period found in reflectance and reflectance anisotropy measurements of GaAs and AlGaAs surfaces during growth by chemical beam epitaxy (CBE) at high III:V BEP ratios.

AB - The investigation of the nature of the transient period found in reflectance and reflectance anisotropy measurements of GaAs and AlGaAs surfaces during growth by chemical beam epitaxy (CBE) at high III:V BEP ratios.

M3 - Doctoral Thesis

PB - University of Liverpool

ER -

Growth initiation processes for GaAs and AlGaAs in CBE

Abstract

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