High-power quantum dot semiconductor disk lasers

Jussi Rautiainen; Mantas Butkus; Igor Krestnikov; Edik U. Rafailov; Oleg Okhotnikov

doi:10.1117/12.905067

High-power quantum dot semiconductor disk lasers

Jussi Rautiainen, Mantas Butkus, Igor Krestnikov, Edik U. Rafailov, Oleg Okhotnikov

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Conference article › peer-review

Abstract

The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.

Original language	English
Article number	824207
Journal	Proceedings of SPIE - International Society for Optical Engineering
Volume	8242
DOIs	https://doi.org/10.1117/12.905067
Publication status	Published - 14 Apr 2012
Event	Vertical External Cavity Surface Emitting Lasers (VECSELs) II - San Francisco, United States Duration: 21 Jan 2012 → 26 Jan 2012

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title = "High-power quantum dot semiconductor disk lasers",

abstract = "The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.",

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AU - Rautiainen, Jussi

AU - Butkus, Mantas

AU - Krestnikov, Igor

AU - Rafailov, Edik U.

AU - Okhotnikov, Oleg

PY - 2012/4/14

Y1 - 2012/4/14

N2 - The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.

AB - The latest achievements of quantum dot based semiconductor disk lasers are reviewed. Several lasers operating at 1040 nm - 1260 nm were studied. All the structures were grown with molecular beam epitaxy on GaAs substrates. The number of quantum dot layers was varied and the gain was provided either by the ground or the excited state transition of the quantum dots. Frequency doubling of the lasers was demonstrated and the dual-gain laser geometry was found to be practical solution for intracavity frequency conversion. Intracavity heat spreader and thinned device heat management approaches are studied and compared.

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DO - 10.1117/12.905067

M3 - Conference article

SN - 0277-786X

VL - 8242

JO - Proceedings of SPIE - International Society for Optical Engineering

JF - Proceedings of SPIE - International Society for Optical Engineering

M1 - 824207

T2 - Vertical External Cavity Surface Emitting Lasers (VECSELs) II

Y2 - 21 January 2012 through 26 January 2012

ER -

High-power quantum dot semiconductor disk lasers

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