Increasing the fracture toughness of silicon by ion implantation

J.G. Swadener; M. Nastasi

doi:10.1016/S0168-583X(03)00865-6

Increasing the fracture toughness of silicon by ion implantation

J.G. Swadener, M. Nastasi

Research output: Contribution to journal › Article › peer-review

Abstract

Previous studies have shown that moderate doses of radiation can lead to increased fracture toughness in ceramics. An experimental investigation was conducted to determine the effects of ion implantation on fracture toughness in silicon. Specimens implanted with Ne showed increased fracture toughness, over the entire range of implantations tested. Using ions of various energies to better distribute implantation damage further increased the fracture toughness even though the region of amorphous damage was slightly decreased. The implantation damage accumulated in a predictable manner so that fracture toughness could be optimized.

Original language	English
Pages (from-to)	937-940
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research: Section B
Volume	206
DOIs	https://doi.org/10.1016/S0168-583X(03)00865-6
Publication status	Published - May 2003

Bibliographical note

Keywords

fracture mechanics
implantation
radiation effects
silicone

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10.1016/S0168-583X(03)00865-6

Increasing the fracture toughness of silicon by ion implantationAccepted author manuscript, 232 KBLicence: CC BY-NC-ND 3.0

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AB - Previous studies have shown that moderate doses of radiation can lead to increased fracture toughness in ceramics. An experimental investigation was conducted to determine the effects of ion implantation on fracture toughness in silicon. Specimens implanted with Ne showed increased fracture toughness, over the entire range of implantations tested. Using ions of various energies to better distribute implantation damage further increased the fracture toughness even though the region of amorphous damage was slightly decreased. The implantation damage accumulated in a predictable manner so that fracture toughness could be optimized.

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KW - radiation effects

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JO - Nuclear Instruments and Methods in Physics Research: Section B

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Increasing the fracture toughness of silicon by ion implantation

Abstract

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Keywords

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