InGaN/GaN Laser Diodes with High Order Notched Gratings

Thomas J. Slight; Amit Yadav; Opeoluwa Odedina; Wyn Meredith; Kevin E. Docherty; Edik Rafailov; Anthony E. Kelly

doi:10.1109/LPT.2017.2759903

InGaN/GaN Laser Diodes with High Order Notched Gratings

Thomas J. Slight, Amit Yadav, Opeoluwa Odedina, Wyn Meredith, Kevin E. Docherty, Edik Rafailov, Anthony E. Kelly

Aston Institute of Photonic Technologies (AiPT)

Research output: Contribution to journal › Article › peer-review

Abstract

We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.

Original language	English
Pages (from-to)	2020-2022
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	29
Issue number	3
Early online date	5 Oct 2017
DOIs	https://doi.org/10.1109/LPT.2017.2759903
Publication status	Published - 1 Dec 2017

Bibliographical note

Copyright: IEEE

Keywords

Distributed feedback laser diodes
GaN
InGaN
Lateral grating
Notched grating
Semiconductor lasers
Sidewall grating
Slotted laser

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10.1109/LPT.2017.2759903

InGaNGaN Laser Diodes with High Order Notched Gratings
Copyright: IEEE
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title = "InGaN/GaN Laser Diodes with High Order Notched Gratings",

abstract = "We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.",

keywords = "Distributed feedback laser diodes, GaN, InGaN, Lateral grating, Notched grating, Semiconductor lasers, Sidewall grating, Slotted laser",

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AU - Slight, Thomas J.

AU - Yadav, Amit

AU - Odedina, Opeoluwa

AU - Meredith, Wyn

AU - Docherty, Kevin E.

AU - Rafailov, Edik

AU - Kelly, Anthony E.

N1 - Copyright: IEEE

PY - 2017/12/1

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N2 - We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.

AB - We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.

KW - Distributed feedback laser diodes

KW - GaN

KW - InGaN

KW - Lateral grating

KW - Notched grating

KW - Semiconductor lasers

KW - Sidewall grating

KW - Slotted laser

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

InGaN/GaN Laser Diodes with High Order Notched Gratings

Abstract

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Keywords

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