Mechanisms of a change in the refractive index of an intensely pumped Yb: YAG crystal

Oleg L. Antipov, D.V. Bredikhin, O.N. Eremeykin, E.V. Ivakin, A.P. Savikin, A.V. Sukhodolov, K.A. Fedorova

Research output: Contribution to journalArticlepeer-review

Abstract

Mechanisms of a change in the refractive index appearing in an intensely diode-pumped Yb:YAG-laser disk element are studied with the help of polarisation interferometry and dynamic grating testing. It is found that changes in the electronic component of the refractive index arising upon changing the populations of electronic levels of Yb ions (the ground F state and the upper F level of the laser transition) and caused by the difference in the polarisability of these levels are an order of magnitude greater than thermal changes in the refractive index. It is shown that the difference Δp in the polarisability at the probe wavelength of 633 nm is 1.9 × 10 cm and at the laser transition wavelength of 1029 nm is 1.6 × 10 cm.
Original languageEnglish
Pages (from-to)418-423
Number of pages6
JournalQuantum Electronics
Volume36
Issue number5
DOIs
Publication statusPublished - 1 May 2006

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