Abstract
Impedance spectroscopy has been used to investigate conductivity within boron-doped diamond in an intrinsic/delta-doped/intrinsic (i-d-i) multilayer structure. For a 5 nm thick delta layer, three conduction pathways are observed, which can be assigned to transport within the delta layer and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping/detrapping processes can be observed, and only at the highest temperature investigated (673 K) can transport due to a single conduction process be seen. Impedance spectroscopy is an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.
Original language | English |
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Article number | 052107 |
Pages (from-to) | 052107 |
Number of pages | 1 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2 Feb 2009 |
Keywords
- boron
- diamond
- electrical conductivity
- elemental semiconductors
- multilayers