Separation of two distinct fast interface states at the (100)Si/SiO2 interface using the conductance technique

M.J. Uren; K.M. Brunson; A.M. Hodge

doi:10.1063/1.107461

Separation of two distinct fast interface states at the (100)Si/SiO₂ interface using the conductance technique

M.J. Uren, K.M. Brunson, A.M. Hodge

Aston STEM Education Centre

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied the annealing of fast and slow Si/SiO₂interface states generated by 10‐MeV electron irradiation using the conductance technique. The fast‐state conductance peak is shown to be separable into contributions from defects characterized by two different capture cross sections, densities of states, and annealing behaviors.

Original language	English
Pages (from-to)	624-626
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	5
DOIs	https://doi.org/10.1063/1.107461
Publication status	Published - Feb 1992

Keywords

annealing
capture
defect states
electron beams
interface states
oxidation
physical radiation effects
si junctions
silicon

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10.1063/1.107461

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@article{d90a6314ec0b4a0fbd4b3c394bd39105,

title = "Separation of two distinct fast interface states at the (100)Si/SiO2 interface using the conductance technique",

abstract = "We have studied the annealing of fast and slow Si/SiO2 interface states generated by 10‐MeV electron irradiation using the conductance technique. The fast‐state conductance peak is shown to be separable into contributions from defects characterized by two different capture cross sections, densities of states, and annealing behaviors. ",

keywords = "annealing, capture, defect states, electron beams, interface states, oxidation, physical radiation effects, si junctions, silicon",

author = "M.J. Uren and K.M. Brunson and A.M. Hodge",

year = "1992",

month = feb,

doi = "10.1063/1.107461",

language = "English",

volume = "60",

pages = "624--626",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Separation of two distinct fast interface states at the (100)Si/SiO2 interface using the conductance technique

AU - Uren, M.J.

AU - Brunson, K.M.

AU - Hodge, A.M.

PY - 1992/2

Y1 - 1992/2

N2 - We have studied the annealing of fast and slow Si/SiO2 interface states generated by 10‐MeV electron irradiation using the conductance technique. The fast‐state conductance peak is shown to be separable into contributions from defects characterized by two different capture cross sections, densities of states, and annealing behaviors.

AB - We have studied the annealing of fast and slow Si/SiO2 interface states generated by 10‐MeV electron irradiation using the conductance technique. The fast‐state conductance peak is shown to be separable into contributions from defects characterized by two different capture cross sections, densities of states, and annealing behaviors.

KW - annealing

KW - capture

KW - defect states

KW - electron beams

KW - interface states

KW - oxidation

KW - physical radiation effects

KW - si junctions

KW - silicon

UR - http://scitation.aip.org/content/aip/journal/apl/60/5/10.1063/1.107461

U2 - 10.1063/1.107461

DO - 10.1063/1.107461

M3 - Article

SN - 0003-6951

VL - 60

SP - 624

EP - 626

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Separation of two distinct fast interface states at the (100)Si/SiO₂ interface using the conductance technique

Abstract

Keywords

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