Silicon oxidation by rapid thermal processing (RTP)

A.M. Hodge; C. Pickering; A.J. Pidduck; R.W. Hardeman

doi:10.1557/PROC-52-313

Silicon oxidation by rapid thermal processing (RTP)

A.M. Hodge, C. Pickering, A.J. Pidduck, R.W. Hardeman

Aston STEM Education Centre

Research output: Chapter in Book/Published conference output › Conference publication

Abstract

Single crystal silicon wafers have been oxidised by exposure to an oxygen ambient at atmospheric pressure during RTP using an A G Associates Heatpulse 2101 Rapid Thermal Annealer. Wafers of the standard orientations used in silicon device processing <100>, <111> and <110> were studied. Oxidation was carried out in the temperature range 900 to 1250°C for times of RTP from 4 to 25U seconds producing oxides up to 60nm in thickness. Oxidation rates and their orientation and temperature dependence were derived from ellipsometric measurements of oxide thickness. X-ray photoelectron spectroscopy (XPS) and infra-red absorption spectrophotometry were also employed in the oxide characterisation. Preliminary electrical characterisation of the oxides, investigated using MOS C-V analyses, showed that the interface state densities were comparable to those in conventional furnace grown oxides.

Original language	English
Title of host publication	Rapid Thermal Processing
Editors	T.O. Sedgwick, T.E. Seidel, B-Y Tsaur
Pages	313-319
Number of pages	7
DOIs	https://doi.org/10.1557/PROC-52-313
Publication status	Published - 1986

Keywords

semiconductor devices
mosfet
rapis thermal processing
thin oxide films
semiconducting silicon
semiconductor materials

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10.1557/PROC-52-313

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@inproceedings{0473908fd419412c9bacc81ce777253e,

title = "Silicon oxidation by rapid thermal processing (RTP)",

abstract = "Single crystal silicon wafers have been oxidised by exposure to an oxygen ambient at atmospheric pressure during RTP using an A G Associates Heatpulse 2101 Rapid Thermal Annealer. Wafers of the standard orientations used in silicon device processing <100>, <111> and <110> were studied. Oxidation was carried out in the temperature range 900 to 1250°C for times of RTP from 4 to 25U seconds producing oxides up to 60nm in thickness. Oxidation rates and their orientation and temperature dependence were derived from ellipsometric measurements of oxide thickness. X-ray photoelectron spectroscopy (XPS) and infra-red absorption spectrophotometry were also employed in the oxide characterisation. Preliminary electrical characterisation of the oxides, investigated using MOS C-V analyses, showed that the interface state densities were comparable to those in conventional furnace grown oxides.",

keywords = "semiconductor devices, mosfet, rapis thermal processing, thin oxide films, semiconducting silicon, semiconductor materials",

author = "A.M. Hodge and C. Pickering and A.J. Pidduck and R.W. Hardeman",

year = "1986",

doi = "10.1557/PROC-52-313",

language = "English",

isbn = "0931837170",

pages = "313--319",

editor = "T.O. Sedgwick and T.E. Seidel and Tsaur, {B-Y }",

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TY - GEN

T1 - Silicon oxidation by rapid thermal processing (RTP)

AU - Hodge, A.M.

AU - Pickering, C.

AU - Pidduck, A.J.

AU - Hardeman, R.W.

PY - 1986

Y1 - 1986

N2 - Single crystal silicon wafers have been oxidised by exposure to an oxygen ambient at atmospheric pressure during RTP using an A G Associates Heatpulse 2101 Rapid Thermal Annealer. Wafers of the standard orientations used in silicon device processing <100>, <111> and <110> were studied. Oxidation was carried out in the temperature range 900 to 1250°C for times of RTP from 4 to 25U seconds producing oxides up to 60nm in thickness. Oxidation rates and their orientation and temperature dependence were derived from ellipsometric measurements of oxide thickness. X-ray photoelectron spectroscopy (XPS) and infra-red absorption spectrophotometry were also employed in the oxide characterisation. Preliminary electrical characterisation of the oxides, investigated using MOS C-V analyses, showed that the interface state densities were comparable to those in conventional furnace grown oxides.

AB - Single crystal silicon wafers have been oxidised by exposure to an oxygen ambient at atmospheric pressure during RTP using an A G Associates Heatpulse 2101 Rapid Thermal Annealer. Wafers of the standard orientations used in silicon device processing <100>, <111> and <110> were studied. Oxidation was carried out in the temperature range 900 to 1250°C for times of RTP from 4 to 25U seconds producing oxides up to 60nm in thickness. Oxidation rates and their orientation and temperature dependence were derived from ellipsometric measurements of oxide thickness. X-ray photoelectron spectroscopy (XPS) and infra-red absorption spectrophotometry were also employed in the oxide characterisation. Preliminary electrical characterisation of the oxides, investigated using MOS C-V analyses, showed that the interface state densities were comparable to those in conventional furnace grown oxides.

KW - semiconductor devices

KW - mosfet

KW - rapis thermal processing

KW - thin oxide films

KW - semiconducting silicon

KW - semiconductor materials

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A2 - Sedgwick, T.O.

A2 - Seidel, T.E.

A2 - Tsaur, B-Y

ER -

Silicon oxidation by rapid thermal processing (RTP)

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Keywords

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