Abstract
We report for the first time the one-step synthesis of solution-processable, highly crystalline, niobiumdoped titanium dioxide (Nb-TiO2) nanorods in the anatase phase by the hydrolytic condensation of Ti(Oi Pr)4 and niobium(V) ethoxide using oleic acid as a structure-directing and stabilising agent. These
novel surface-stabilised nanorods can be easily dispersed in common solvents at relatively high concentration (B10%) and deposited as uniform, thin and transparent films on planar substrates for the fabrication of electronic devices. The small size of the nanoparticles synthesized represents an important
advance in achieving high-k dielectric thin films smooth enough to be suitable for OFET applications and the plastic electronics filed in general. Preliminary investigations show that the dielectric constant, k, of niobium-doped (7.1 wt%) titanium dioxide (Nb-TiO2) nanorods at frequencies in the region of
100 kHz–1 MHz, are more a third greater (k 4 8) than that (k = 6) determined for the corresponding undoped titanium dioxide (TiO2) nanorods. The current–voltage (J–V) behaviour of these devices reveal that niobium-doping improves, by reducing, the leakage current of these devices, thereby preventing
hard dielectric breakdown of devices incorporating these new nanorods
novel surface-stabilised nanorods can be easily dispersed in common solvents at relatively high concentration (B10%) and deposited as uniform, thin and transparent films on planar substrates for the fabrication of electronic devices. The small size of the nanoparticles synthesized represents an important
advance in achieving high-k dielectric thin films smooth enough to be suitable for OFET applications and the plastic electronics filed in general. Preliminary investigations show that the dielectric constant, k, of niobium-doped (7.1 wt%) titanium dioxide (Nb-TiO2) nanorods at frequencies in the region of
100 kHz–1 MHz, are more a third greater (k 4 8) than that (k = 6) determined for the corresponding undoped titanium dioxide (TiO2) nanorods. The current–voltage (J–V) behaviour of these devices reveal that niobium-doping improves, by reducing, the leakage current of these devices, thereby preventing
hard dielectric breakdown of devices incorporating these new nanorods
| Original language | English |
|---|---|
| Pages (from-to) | 1038-1047 |
| Journal | Journal of Materials Chemistry C |
| Volume | 6 |
| Early online date | 28 Dec 2017 |
| DOIs | |
| Publication status | Published - 28 Dec 2017 |