Stealth dicing of sapphire wafers with near infra-red femtosecond pulses

Amit Yadav*, Hani Kbashi, Stanislav Kolpakov, Neil Gordon, Kaiming Zhou, Edik U. Rafailov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The quality of the reflecting faces after dicing is critical for the fabrication of efficient and stable laser diodes emitting in the green–violet region. However, high-quality faces can be difficult to achieve for devices grown on a sapphire substrate as this material is difficult to cleave cleanly. We have therefore investigated a technology known as “stealth dicing”. The technology uses a pulsed laser to damage a plane of material inside of the wafer due to multi-photon absorption instead of cutting through the wafer surface. If the damage is induced in a line of stress points, the sample can then be cleaved easily along the damaged plane to leave a high-quality surface. The use of this technique also reduces thermal damage and debris.

Original languageEnglish
Article number369
Number of pages7
JournalApplied Physics A
Issue number5
Early online date25 Apr 2017
Publication statusPublished - May 2017

Bibliographical note

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