Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

Lin Shao; Yuan Lin; J.G. Swadener; J.K. Lee; Q.X. Jia; Y.Q. Wang; M. Nastasi; Phillip E. Thompson; N. David Theodore; T.L. Alford; J.W. Mayer; Peng Chen; S.S. Lau

doi:10.1063/1.2146211

Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

Lin Shao, Yuan Lin, J.G. Swadener, J.K. Lee, Q.X. Jia, Y.Q. Wang, M. Nastasi, Phillip E. Thompson, N. David Theodore, T.L. Alford, J.W. Mayer, Peng Chen, S.S. Lau

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Abstract

We report a process for the lift-off of an ultrathin Si layer. By plasma hydrogenation of a molecular-beam-epitaxy-grown heterostructure of SiSb-doped-SiSi, ultrashallow cracking is controlled to occur at the depth of the Sb-doped layer. Prior to hydrogenation, an oxygen plasma treatment is used to induce the formation of a thin oxide layer on the surface of the heterostructure. Chemical etching of the surface oxide layer after hydrogenation further thins the thickness of the separated Si layer to be only 15 nm. Mechanisms of hydrogen trapping and strain-facilitated cracking are discussed.

Original language	English
Article number	251907
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	25
DOIs	https://doi.org/10.1063/1.2146211
Publication status	Published - 19 Dec 2005

Bibliographical note

Keywords

lift-off
plasma hydrogenation
strain-facilitated cracking
ultrashallow cracking

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10.1063/1.2146211

Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness
© 2005 American Institute of Physics. Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness. Lin Shao et al. Applied Physics Letters 2005 87:25
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abstract = "We report a process for the lift-off of an ultrathin Si layer. By plasma hydrogenation of a molecular-beam-epitaxy-grown heterostructure of SiSb-doped-SiSi, ultrashallow cracking is controlled to occur at the depth of the Sb-doped layer. Prior to hydrogenation, an oxygen plasma treatment is used to induce the formation of a thin oxide layer on the surface of the heterostructure. Chemical etching of the surface oxide layer after hydrogenation further thins the thickness of the separated Si layer to be only 15 nm. Mechanisms of hydrogen trapping and strain-facilitated cracking are discussed.",

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AU - Shao, Lin

AU - Lin, Yuan

AU - Swadener, J.G.

AU - Lee, J.K.

AU - Jia, Q.X.

AU - Wang, Y.Q.

AU - Nastasi, M.

AU - Thompson, Phillip E.

AU - Theodore, N. David

AU - Alford, T.L.

AU - Mayer, J.W.

AU - Chen, Peng

AU - Lau, S.S.

PY - 2005/12/19

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N2 - We report a process for the lift-off of an ultrathin Si layer. By plasma hydrogenation of a molecular-beam-epitaxy-grown heterostructure of SiSb-doped-SiSi, ultrashallow cracking is controlled to occur at the depth of the Sb-doped layer. Prior to hydrogenation, an oxygen plasma treatment is used to induce the formation of a thin oxide layer on the surface of the heterostructure. Chemical etching of the surface oxide layer after hydrogenation further thins the thickness of the separated Si layer to be only 15 nm. Mechanisms of hydrogen trapping and strain-facilitated cracking are discussed.

AB - We report a process for the lift-off of an ultrathin Si layer. By plasma hydrogenation of a molecular-beam-epitaxy-grown heterostructure of SiSb-doped-SiSi, ultrashallow cracking is controlled to occur at the depth of the Sb-doped layer. Prior to hydrogenation, an oxygen plasma treatment is used to induce the formation of a thin oxide layer on the surface of the heterostructure. Chemical etching of the surface oxide layer after hydrogenation further thins the thickness of the separated Si layer to be only 15 nm. Mechanisms of hydrogen trapping and strain-facilitated cracking are discussed.

KW - lift-off

KW - plasma hydrogenation

KW - strain-facilitated cracking

KW - ultrashallow cracking

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Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

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Keywords

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