Structural, electrical and multiferroic properties of La-doped mullite Bi2Fe4O9 thin films

C. M. Raghavan, J. W. Kim, J. W. Kim, S. S. Kim*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Abstract Thin films of (Bi2-xLax)Fe4O9 (x = 0 and x = 0.05) were prepared on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by using a chemical solution deposition method to investigate structural, microstructural, electrical and multiferroic properties. Both the thin films were crystallized in mullite type phases with orthorhombic structures containing no secondary and impurity phases, which was confirmed by X-ray diffraction and Raman spectroscopy studies. The (Bi1.95La0.05)Fe4O9 thin film exhibited improved electrical and multiferroic properties at room-temperature. The leakage current density of the (Bi1.95La0.05)Fe4O9 thin film was one order of magnitude lower than that of the Bi2Fe4O9 thin film. Furthermore, in the thin film form, (Bi2-xLax)Fe4O9 exhibited better stability against electrical breakdowns and enhanced multiferroic properties.

Original languageEnglish
Pages (from-to)279-283
Number of pages5
JournalMaterials Research Bulletin
Publication statusPublished - 1 Oct 2015


  • A. Thin films
  • B. Magnetic properties
  • B. Sol-gel chemistry
  • D. Electrical properties
  • D. Ferroelectricity


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