The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer

David Coathup; Zheng Li; Xiaojing Zhu; Haitao Ye

doi:10.1016/j.matlet.2017.06.112

The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer

David Coathup, Zheng Li, Xiaojing Zhu, Haitao Ye^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Lanthanum-doped bismuth titanate (BLT) thin films were grown on buffered Si substrates using a RF magnetron sputtering system. Electrically conducting ZnO layers were used as an effective buffer layer to facilitate the growth of the ferroelectric thin films. X-ray diffraction data shows the Aurivilius phase structure with the highest diffraction peak (1 1 7), indicating non-c-axis-oriented microstructure. Random oriented plate-like grains were observed using scanning electron microscopy. The ferroelectric nature of the film was proved by ferroelectric domain switching under an electrical field.

Original language	English
Pages (from-to)	117-120
Number of pages	4
Journal	Materials Letters
Volume	206
Early online date	27 Jun 2017
DOIs	https://doi.org/10.1016/j.matlet.2017.06.112
Publication status	Published - 1 Nov 2017

Bibliographical note

© 2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/

Funding: EU H2020 Project (No. 734578)

Keywords

bismuth titanate
ferroelectrics
sputtering
thin films
ZnO

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10.1016/j.matlet.2017.06.112

Growth of non-c-axis-oriented ferroelectric BLT thin films on silicon
© 2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/
Accepted author manuscript, 512 KBLicence: CC BY-NC-ND 3.0

Cite this

@article{db05b5d1a6234aadbed6fc19cd0919ac,

title = "The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer",

abstract = "Lanthanum-doped bismuth titanate (BLT) thin films were grown on buffered Si substrates using a RF magnetron sputtering system. Electrically conducting ZnO layers were used as an effective buffer layer to facilitate the growth of the ferroelectric thin films. X-ray diffraction data shows the Aurivilius phase structure with the highest diffraction peak (1 1 7), indicating non-c-axis-oriented microstructure. Random oriented plate-like grains were observed using scanning electron microscopy. The ferroelectric nature of the film was proved by ferroelectric domain switching under an electrical field.",

keywords = "bismuth titanate, ferroelectrics, sputtering, thin films, ZnO",

author = "David Coathup and Zheng Li and Xiaojing Zhu and Haitao Ye",

note = "{\textcopyright} 2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/ Funding: EU H2020 Project (No. 734578)",

year = "2017",

month = nov,

day = "1",

doi = "10.1016/j.matlet.2017.06.112",

language = "English",

volume = "206",

pages = "117--120",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

}

TY - JOUR

T1 - The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer

AU - Coathup, David

AU - Li, Zheng

AU - Zhu, Xiaojing

AU - Ye, Haitao

N1 - © 2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/ Funding: EU H2020 Project (No. 734578)

PY - 2017/11/1

Y1 - 2017/11/1

N2 - Lanthanum-doped bismuth titanate (BLT) thin films were grown on buffered Si substrates using a RF magnetron sputtering system. Electrically conducting ZnO layers were used as an effective buffer layer to facilitate the growth of the ferroelectric thin films. X-ray diffraction data shows the Aurivilius phase structure with the highest diffraction peak (1 1 7), indicating non-c-axis-oriented microstructure. Random oriented plate-like grains were observed using scanning electron microscopy. The ferroelectric nature of the film was proved by ferroelectric domain switching under an electrical field.

AB - Lanthanum-doped bismuth titanate (BLT) thin films were grown on buffered Si substrates using a RF magnetron sputtering system. Electrically conducting ZnO layers were used as an effective buffer layer to facilitate the growth of the ferroelectric thin films. X-ray diffraction data shows the Aurivilius phase structure with the highest diffraction peak (1 1 7), indicating non-c-axis-oriented microstructure. Random oriented plate-like grains were observed using scanning electron microscopy. The ferroelectric nature of the film was proved by ferroelectric domain switching under an electrical field.

KW - bismuth titanate

KW - ferroelectrics

KW - sputtering

KW - thin films

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=85021749576&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2017.06.112

DO - 10.1016/j.matlet.2017.06.112

M3 - Article

SN - 0167-577X

VL - 206

SP - 117

EP - 120

JO - Materials Letters

JF - Materials Letters

ER -

The growth of non-c-axis-oriented ferroelectric BLT thin films on silicon using ZnO buffer layer

Abstract

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