TY - JOUR
T1 - Versatile mode-locked quantum-dot laser diodes
AU - Cataluna, M. A.
AU - Rafailov, E. U.
PY - 2010/4/27
Y1 - 2010/4/27
N2 - Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edge-emitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.
AB - Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edge-emitting lasers, both in monolithic and external cavity configurations. We present the current status of our research on ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent progress in external-cavity broadband tunable quantum-dot lasers.
UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000285296800020&KeyUID=WOS:000285296800020
UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/7720/1/Versatile-mode-locked-quantum-dot-laser-diodes/10.1117/12.854639.short
U2 - 10.1117/12.854639
DO - 10.1117/12.854639
M3 - Conference article
SN - 0277-786X
VL - 7720
JO - Proceedings of SPIE - International Society for Optical Engineering
JF - Proceedings of SPIE - International Society for Optical Engineering
M1 - 77200W
ER -