TY - JOUR
T1 - XPS and XMCD study of Fe3O4/GaAs interface
AU - Lu, Yongxiong
AU - Claydon, Jill S.
AU - Ahmad, Ehsan
AU - Xu, Yongbing
AU - Thompson, Sarah M.
AU - Wilson, Karen
AU - van der Laan, Gerrit
PY - 2005/10
Y1 - 2005/10
N2 - Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of insulating Fe divalent oxide phases (FeO) beneath the surface Fe3O4 layer with the sample thickness above 4 nm. This FeO might act as a barrier for the spin injection into the GaAs.
AB - Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of insulating Fe divalent oxide phases (FeO) beneath the surface Fe3O4 layer with the sample thickness above 4 nm. This FeO might act as a barrier for the spin injection into the GaAs.
KW - Half-metallic Fe3O4
KW - post-growth oxidation
KW - spintronics
KW - XMCD
UR - http://www.scopus.com/inward/record.url?scp=27744455309&partnerID=8YFLogxK
UR - http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1519129
U2 - 10.1109/TMAG.2005.854834
DO - 10.1109/TMAG.2005.854834
M3 - Article
AN - SCOPUS:27744455309
SN - 0018-9464
VL - 41
SP - 2808
EP - 2810
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
IS - 10
ER -